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  ? 2002 ixys all rights reserved 1 - 2 VKM40-06P1 ixys reserves the right to change limits, test conditions and dimensions. 238 coolmos power mosfet in eco-pac 2 n-channel enhancement mode low r dson , high v dss mosfet package with electrically isolated base features eco-pac 2 with dcb base - electrical isolation towards the heatsink - low coupling capacitance to the heatsink for reduced emi - high power dissipation - high temperature cycling capability of chip on dcb - solderable pins for dcb mounting fast coolmos power mosfet - 2 nd generation - high blocking capability - low on resistance - avalanche rated for unclamped inductive switching (uis) - low thermal resistance due to reduced chip thickness enhanced total power density applications switched mode power supplies (smps) uninterruptible power supplies (ups) power factor correction (pfc) welding inductive heating 1) coolmos is a trademark of infineon technologies ag. mosfet symbol conditions maximum ratings v dss t vj = 25c to 150c 600 v v gs 20 v i d25 t c = 25c 38 a i d90 t c = 90c 25 a dv/dt v ds < v dss ; i f 50a; di f /dt 200a/s 6 v/ns t vj = 150c e as i d = 10 a; l = 36 mh; t c = 25c 1.8 j e ar i d = 20 a; l = 5 h; t c = 25c 1 mj symbol conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. r dson v gs = 10 v; i d = i d90 70 m ? v gsth v ds = 20 v; i d = 3 ma; 3.5 5.5 v i dss v ds = v dss ; v gs = 0 v; t vj = 25c 25 a t vj = 125c 60 a i gss v gs = 20 v; v ds = 0 v 100 na q g 220 nc q gs 55 nc q gd 125 nc t d(on) 30 ns t r 95 ns t d(off) 100 ns t f 10 ns v f (reverse conduction) i f = 20 a; v gs = 0 v 0.9 1.1 v r thjc per mosfet 0.45 k/w v gs = 10 v; v ds = 350 v; i d = 50 a v gs = 10 v; v ds = 380 v; i d = 25 a; r g = 1.8 ? preliminary data sheet i d25 = 38 a v dss = 600 v r dson = 70 m ? ? ? ? ? pin arangement see outlines 1) data according to iec 60747 refer to a single diode or transistor unless otherwise stated l 4 l 9 p 18 r 18 x 15 t 18 v 18 a1 e10 f10 k10 k 12 k 13 ntc l 6 x 18
? 2002 ixys all rights reserved 2 - 2 VKM40-06P1 ixys reserves the right to change limits, test conditions and dimensions. 238 module symbol conditions maximum ratings t vj -40...+150 c t stg -40...+125 c v isol i isol 1 ma; 50/60 hz; t = 1 s 3600 v~ m d mounting torque (m4) 1.5 - 2.0 nm 14 - 18 lb.in. a max. allowable acceleration 50 m/s 2 symbol conditions characteristic values min. typ. max. d s creepage distance on surface (pin to heatsink) 11.2 mm d a strike distance in air (pin to heatsink) 11.2 mm weight 24 g dimensions in mm (1 mm = 0.0394") temperature sensor ntc symbol conditions characteristic values min. typ. max. r 25 t = 25c 4.75 5.0 5.25 k ? b 25/50 3375 k


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